Integrated Low Noise Amplifiers for Cryogenic Applications
20.10.2017

This paper is devoted to an analysis of modern cryogenic low noise amplifier designs in integrated implementation. An analytical comparison between two modern semiconductor technologies InP HEMT η SiGe HBT, used for design and manufacture of cryogenic low noise amplifiers with advanced low noise parameters is presented.

Cherepanov A.A., Vasilyev V.Yu.  Integrated Low Noise Amplifiers for Cryogenic Applications // Proceedings of 2017 18th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices EDM, 2017, p.p.142-146.

DOI: 10.1109/EDM.2017.7981729

http://ieeexplore.ieee.org/document/7981729/