Статьи и публикации
Разработка интегральных микросхем по высоковольтным субмикронным технологиям для силовой электроники
В данной работе представлены результаты разработки и верификации «в кремнии» выполненных по различным высоковольтным субмикронным технологиям интегральных микросхем управления для силовой ...
Integrated Low Noise Amplifiers for Cryogenic Applications
This paper is devoted to an analysis of modern cryogenic low noise amplifier designs in integrated implementation. An analytical comparison between two modern semiconductor technologies InP HEMT ...
Wide Temperature Range Low Drop Output Units Realized with 250 nm 40 V BCD Technology
5 V and 12 V embedded low drop output (LDO) units are designed as parts of Multi-Functional Power Converter Control Integrated Circuits (MFPCC IC) and fabricated using 250 nm 40 V BCD (Bipolar, CMOS, ...
Test submicron integrated circuit for wideband RF short-distance locator with noise modulation
Test submicron application specific Integrated Circuit (IC) for wideband RF short-distance locator is described. IC has been developed and manufactured using 130 nm silicon CMOS technology. Results of...
Model of wideband RF short-distance locator
This paper describes a full-scale model of wideband RF short-distance locator dedicated for high-speed objects detection at short distance. This compact model has been designed using discrete componen...
Dynamic behavior of MEMS variable capacitor for autonomous biometric sensors
The influence of spring element profile obtained by deep reactive ion etching on dynamic behavior of MEMS variable capacitor for electrostatic vibration energy harvester is studied. It is found that t...
High-voltage low drop output voltage regulator with output current fold-back protection in 250 nm BCD technology
This work is devoted to development of high-voltage low drop output (LDO) voltage regulator integrated circuit (IC) for power supply units. IC is realized in 250 nm BCD (Bipolar, CMOS, DMOS) mixed tec...
Electrostatic discharge protection in 250 nm BCD technology for multi-functional control integrated circuits for power converters
This work is devoted to the designing and development of Electrostatic Discharge (ESD) Protection elements for Integrated Circuits in 250 nm BCD (Bipolar, CMOS, DMOS) mixed technology. ESD protection ...
Multi-functional control integrated circuits in 250 nm BCD technology for high-efficiency power converters
This work represents experience obtained during development of experimental samples of Multi-Functional Control Integrated Circuits dedicated for modern low power, high-efficiency power supply units.
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Active output rectifier controller IC in 250 nm BCD technology for high-efficiency power converter
This work is devoted to the designing and development of an active output rectifier (AOR) integrated circuit (IC) for high-efficiency power supply units. IC is realized with the use of 250 nm BCD (Bip...